High - Voltage CMOS Process Technology

Fuji Electric has developed processes to fabricate ICs. The process satisfies demands for a display driver IC of up to about 100V for a liquid crystal display (LCD), plasma display panel (PDP) and vacuum fluorescent display (VFD). The power control IC has up to about 40V of high voltage and high current analog signal control. The ICs are fabricated using the CMOS (complementary MOS) oxide isolation process for driving the LCD, the junction isolation process for driving the PDP and the bipolar process for the power supply. Besides small size and light weight, there are demands for reduced power consumption for longer battery life for electronic apparatus and devices, especially for the handy type. An IC used in electronic apparatus and devices, small chip size by using scaling down process, variety of functions to reduce number of parts, low power consumption and low cost are demanded. The CMOS process which uses oxide isolation technology is low in cost when compared with the DMOS (double diffusedMOS) process and bipolar process of junction isolation technology. Also it is favorable for high integration because CMOS process is suitable for scaling down. Fuji Electric has developed devices using the CMOS oxide isolation process for the IC applying to driving LCD, driving PDP and power supply control. This paper will present a summary of the process and characteristics of the device. The process enables high voltage devices of 30V, 60V and 120V to use the CMOS oxide isolation process.